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DDR Memory Power Supply: 4V to 24Vin, 1.25V@+/-10A Vtt (2.5V external reference)

DDR Memory Power Supply: 4V to 24Vin, 1.25V@+/-10A Vtt (2.5V external reference)

This circuit shows a ±10A design using LTC3717. The input voltage can vary from 5V to 24V. The input voltage can be below 5V if an external 5V bias is available for powering the VCC pin of LTC3717. This design uses only two SO-8 PowerPak MOSFETs from Siliconix to deliver ±10A current. To achieve a higher output current, use an inductor with a higher current rating and lower RDS(ON) MOSFETs. This circuit achieves 84% efficiency at 250kHz switching frequency, 1.25V/10A output and 12V input.