LTC1155 - Dual High Side Micropower MOSFET Driver
- Fully Enhances N-Channel Power MOSFETs
- 8μA Standby Current
- 85μA ON Current
- Short-Circuit Protection
- Wide Power Supply Range: 4.5V to 18V
- Controlled Switching ON and OFF Times
- No External Charge Pump Components
- Replaces P-Channel High Side MOSFETs
- Compatible with Standard Logic Families
- Available in 8-Pin SO Package
The LTC®1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.
CAD Symbols and Footprints: The downloadable Zip file below contains the schematic symbol and PCB footprints.
For complete and up to date package information and drawings, please refer to our packaging page
- Part numbers ending in PBF are lead free. Solder plated terminal finish (SnPb) versions are non-standard and special terms and conditions and pricing applies if available. Please contact LTC marketing for information.
- Part numbers containing TR or TRM are shipped in tape and reel or 500 unit mini tape and reel, respectively
- Please refer to our general ordering information or the product datasheet for more details
Package Variations and Pricing
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